EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
EPC2110

EPC2110

EPC

Description

GANFET 2NCH 120V 3.4A DIE

18,452

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EPC2111

EPC2111

EPC

Description

GAN TRANS ASYMMETRICAL HALF BRID

29,709

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EPC2108

EPC2108

EPC

Description

GANFET 3 N-CH 60V/100V 9BGA

13,564

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EPC2110ENGRT

EPC2110ENGRT

EPC

Description

GAN TRANS 2N-CH 120V BUMPED DIE

10,866

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EPC2102ENGRT

EPC2102ENGRT

EPC

Description

GANFET 2 N-CHANNEL 60V 23A DIE

11,000

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EPC2100ENGRT

EPC2100ENGRT

EPC

Description

GANFET 2 N-CH 30V 9.5A/38A DIE

10,903

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EPC2105

EPC2105

EPC

Description

GAN TRANS ASYMMETRICAL HALF BRID

11,524

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EPC2100

EPC2100

EPC

Description

GAN TRANS ASYMMETRICAL HALF BRID

11,497

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EPC2104

EPC2104

EPC

Description

GAN TRANS SYMMETRICAL HALF BRIDG

17,102

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EPC2106

EPC2106

EPC

Description

GANFET TRANS SYM 100V BUMPED DIE

12,111

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