EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
EPC2038

EPC2038

EPC

Description

GANFET N-CH 100V 500MA DIE

167,801

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EPC2029

EPC2029

EPC

Description

GANFET N-CH 80V 48A DIE

10,892

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EPC2218

EPC2218

EPC

Description

GANFET N-CH 100V DIE

13,641

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EPC2207

EPC2207

EPC

Description

TRANS GAN 200V DIE .022OHM

19,563

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EPC2051

EPC2051

EPC

Description

GANFET N-CH 100V 1.7A DIE

23,400

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EPC2055

EPC2055

EPC

Description

GANFET N-CH 40V 29A DIE

12,854

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EPC2204

EPC2204

EPC

Description

TRANS GAN 100V DIE 5.6MOHM

15,872

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EPC2101

EPC2101

EPC

Description

GAN TRANS ASYMMETRICAL HALF BRID

11,611

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EPC2102

EPC2102

EPC

Description

GAN TRANS SYMMETRICAL HALF BRIDG

11,394

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EPC2103

EPC2103

EPC

Description

GAN TRANS SYMMETRICAL HALF BRIDG

14,955

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