EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
EPC2203

EPC2203

EPC

Description

GANFET N-CH 80V 1.7A DIE

11,272

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EPC2219

EPC2219

EPC

Description

TRANS GAN 65V AECQ101 3.3OHM DIE

10,839

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EPC2012C

EPC2012C

EPC

Description

GANFET N-CH 200V 5A DIE OUTLINE

30,043

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EPC2015C

EPC2015C

EPC

Description

GANFET N-CH 40V 53A DIE

17,017

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EPC2010C

EPC2010C

EPC

Description

GANFET N-CH 200V 22A DIE OUTLINE

12,181

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EPC2022

EPC2022

EPC

Description

GANFET N-CH 100V 60A DIE

10,930

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EPC2014C

EPC2014C

EPC

Description

GANFET N-CH 40V 10A DIE OUTLINE

29,558

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EPC2020

EPC2020

EPC

Description

GANFET N-CH 60V 90A DIE

16,398

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EPC8009

EPC8009

EPC

Description

GANFET N-CH 65V 2.7A DIE

12,949

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EPC2039

EPC2039

EPC

Description

GANFET N-CH 80V 6.8A DIE

89,920

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