EPC is the leader in enhancement mode gallium nitride based power management devices. EPC was the first to introduce enhancement-mode gallium-nitride-on-silicon (eGaN®) FETs as power MOSFET replacements in applications such as DC-DC converters, wireless power transfer, envelope tracking, RF transmission, power inverters, remote sensing technology (LiDAR), and class-D audio amplifiers with device performance many times greater than the best silicon power MOSFETs.
EPC9102

EPC9102

EPC

Description

EVAL DEV FOR EPC2001 EGAN FET

10,924

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EPC9131

EPC9131

EPC

Description

EVAL BOARD FOR EPC2112

10,858

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EPC9130

EPC9130

EPC

Description

EVAL BOARD FOR EPC2045

10,891

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GAN FET BOOK-WIPO

GAN FET BOOK-WIPO

EPC

Description

TEXT WIRELESS POWER HANDBOOK

10,892

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EPC9514

EPC9514

EPC

Description

EVAL BRD WIRELESS POWER REC 19 V

10,846

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EPC9099

EPC9099

EPC

Description

BOARD DEV EPC2215 200V EGAN FET

10,853

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EPC2059ENGRT

EPC2059ENGRT

EPC

Description

TRANS GAN 170V .009 OHM BUMP DIE

10,997

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EPC2025

EPC2025

EPC

Description

GANFET N-CH 300V 4A DIE

10,844

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EPC2050

EPC2050

EPC

Description

TRANS GAN BUMPED DIE

10,930

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EPC9202

EPC9202

EPC

Description

DEMO CIRCUIT FOR EPC2001

10,949

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