GT60N321(Q)

GT60N321(Q)
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Part Number GT60N321(Q)
LIXINC Part # GT60N321(Q)
Manufacturer Toshiba Electronic Devices and Storage Corporation
Category Discrete SemiconductorTransistors - IGBTs - Single
Description IGBT 1000V 60A 170W TO3P LH
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models GT60N321(Q) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jan 27 - Jan 31 2026(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

GT60N321(Q) Specifications

Part Number:GT60N321(Q)
Brand:Toshiba Electronic Devices and Storage Corporation
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - IGBTs - Single
Manufacturer:Toshiba Electronic Devices and Storage Corporation
Series:-
Package:Tube
Part Status:Obsolete
IGBT Type:-
Voltage - Collector Emitter Breakdown (Max):1000 V
Current - Collector (Ic) (Max):60 A
Current - Collector Pulsed (Icm):120 A
Vce(on) (Max) @ Vge, Ic:2.8V @ 15V, 60A
Power - Max:170 W
Switching Energy:-
Input Type:Standard
Gate Charge:-
Td (on/off) @ 25°C:330ns/700ns
Test Condition:-
Reverse Recovery Time (trr):2.5 µs
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-3PL
Supplier Device Package:TO-3P(LH)

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