GT30J341,Q | Toshiba Electronic Devices and Storage Corporation GT30J341,Q

GT30J341,Q

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Part Number	GT30J341,Q
LIXINC Part #	GT30J341,Q
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - IGBTs - Single
Description	IGBT TRANS 600V 30A TO3PN
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	GT30J341,Q PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 25 - Jan 29 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

GT30J341,Q Specifications

Part Number:	GT30J341,Q
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - IGBTs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	-
Package:	Tray
Part Status:	Active
IGBT Type:	-
Voltage - Collector Emitter Breakdown (Max):	600 V
Current - Collector (Ic) (Max):	59 A
Current - Collector Pulsed (Icm):	120 A
Vce(on) (Max) @ Vge, Ic:	2V @ 15V, 30A
Power - Max:	230 W
Switching Energy:	800µJ (on), 600µJ (off)
Input Type:	Standard
Gate Charge:	-
Td (on/off) @ 25°C:	80ns/280ns
Test Condition:	300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr):	50 ns
Operating Temperature:	175°C (TJ)
Mounting Type:	Through Hole
Package / Case:	TO-3P-3, SC-65-3
Supplier Device Package:	TO-3P(N)

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