TPCC8104,L1Q(CM | Toshiba Electronic Devices and Storage Corporation TPCC8104,L1Q(CM

TPCC8104,L1Q(CM

Enlarge

For Reference Only

Part Number	TPCC8104,L1Q(CM
LIXINC Part #	TPCC8104,L1Q(CM
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET P-CH 30V 20A 8TSON
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TPCC8104,L1Q(CM PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jun 05 - Jun 09 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

TPCC8104,L1Q(CM Specifications

Part Number:	TPCC8104,L1Q(CM
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	U-MOSVI
Package:	Tape & Reel (TR)
Part Status:	Active
FET Type:	P-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	20A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	8.8mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:	2V @ 500µA
Gate Charge (Qg) (Max) @ Vgs:	58 nC @ 10 V
Vgs (Max):	+20V, -25V
Input Capacitance (Ciss) (Max) @ Vds:	2260 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	700mW (Ta), 27W (Tc)
Operating Temperature:	150°C
Mounting Type:	Surface Mount
Supplier Device Package:	8-TSON Advance (3.3x3.3)
Package / Case:	8-PowerVDFN

Warm Tips: Please fill out the form below. We will contact you as soon as possible.

Lixinc will offer the most competitive prices for you, please refer to the quotations.

[email protected]

LIXINC

Send Message

Please feel free to contact us for details.

ISO9001:2015 & ISO14001:2015