SSM3J66MFV,L3F

SSM3J66MFV,L3F
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Part Number SSM3J66MFV,L3F
LIXINC Part # SSM3J66MFV,L3F
Manufacturer Toshiba Electronic Devices and Storage Corporation
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET P-CH 20V 800MA VESM
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SSM3J66MFV,L3F PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jan 27 - Jan 31 2026(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SSM3J66MFV,L3F Specifications

Part Number:SSM3J66MFV,L3F
Brand:Toshiba Electronic Devices and Storage Corporation
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Toshiba Electronic Devices and Storage Corporation
Series:U-MOSVI
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:800mA (Ta)
Drive Voltage (Max Rds On, Min Rds On):1.2V, 4.5V
Rds On (Max) @ Id, Vgs:390mOhm @ 800mA, 4.5V
Vgs(th) (Max) @ Id:1V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:1.6 nC @ 4.5 V
Vgs (Max):+6V, -8V
Input Capacitance (Ciss) (Max) @ Vds:100 pF @ 10 V
FET Feature:-
Power Dissipation (Max):150mW (Ta)
Operating Temperature:150°C
Mounting Type:Surface Mount
Supplier Device Package:VESM
Package / Case:SOT-723

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Quick Inquiry

In Stock 18154 - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.39000$0.39

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