NVMJS1D5N04CLTWG | Sanyo Semiconductor/ON Semiconductor NVMJS1D5N04CLTWG

NVMJS1D5N04CLTWG

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Part Number	NVMJS1D5N04CLTWG
LIXINC Part #	NVMJS1D5N04CLTWG
Manufacturer	Sanyo Semiconductor/ON Semiconductor
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 40V 38A/200A 8LFPAK
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	NVMJS1D5N04CLTWG PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 26 - Jan 30 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

NVMJS1D5N04CLTWG Specifications

Part Number:	NVMJS1D5N04CLTWG
Brand:	Sanyo Semiconductor/ON Semiconductor
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Sanyo Semiconductor/ON Semiconductor
Series:	Automotive, AEC-Q101
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	38A (Ta), 200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	1.4mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	2V @ 130µA
Gate Charge (Qg) (Max) @ Vgs:	70 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	4300 pF @ 20 V
FET Feature:	-
Power Dissipation (Max):	3.8W (Ta), 110W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-LFPAK
Package / Case:	SOT-1205, 8-LFPAK56

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