NTMJS1D4N06CLTWG | Sanyo Semiconductor/ON Semiconductor NTMJS1D4N06CLTWG

NTMJS1D4N06CLTWG

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Part Number	NTMJS1D4N06CLTWG
LIXINC Part #	NTMJS1D4N06CLTWG
Manufacturer	Sanyo Semiconductor/ON Semiconductor
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 60V 39A/262A 8LFPAK
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	NTMJS1D4N06CLTWG PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 27 - Jan 31 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

NTMJS1D4N06CLTWG Specifications

Part Number:	NTMJS1D4N06CLTWG
Brand:	Sanyo Semiconductor/ON Semiconductor
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Sanyo Semiconductor/ON Semiconductor
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	39A (Ta), 262A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	1.3mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	2V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:	103 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	7430 pF @ 30 V
FET Feature:	-
Power Dissipation (Max):	4W (Ta), 180W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-LFPAK
Package / Case:	SOT-1205, 8-LFPAK56

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