For Reference Only
| Part Number | SISC29N20DX1SA1 |
| LIXINC Part # | SISC29N20DX1SA1 |
| Manufacturer | IR (Infineon Technologies) |
| Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
| Description | TRANSISTOR P-CH BARE DIE |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | SISC29N20DX1SA1 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jan 26 - Jan 30 2026(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |
|
| Shipping | ![]() |
| Part Number: | SISC29N20DX1SA1 |
| Brand: | IR (Infineon Technologies) |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - FETs, MOSFETs - Single |
| Manufacturer: | IR (Infineon Technologies) |
| Series: | - |
| Package: | Bulk |
| Part Status: | Active |
| FET Type: | - |
| Technology: | - |
| Drain to Source Voltage (Vdss): | - |
| Current - Continuous Drain (Id) @ 25°C: | - |
| Drive Voltage (Max Rds On, Min Rds On): | - |
| Rds On (Max) @ Id, Vgs: | - |
| Vgs(th) (Max) @ Id: | - |
| Gate Charge (Qg) (Max) @ Vgs: | - |
| Vgs (Max): | - |
| Input Capacitance (Ciss) (Max) @ Vds: | - |
| FET Feature: | - |
| Power Dissipation (Max): | - |
| Operating Temperature: | - |
| Mounting Type: | - |
| Supplier Device Package: | - |
| Package / Case: | - |
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| In Stock | 10995 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $0.63560 | $0.6356 |
| 23760 | $0.61719 | $14664.4344 |
Lixinc will offer the most competitive prices for you, please refer to the quotations.
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