For Reference Only
Part Number | BSP299H6327XUSA1 |
LIXINC Part # | BSP299H6327XUSA1 |
Manufacturer | IR (Infineon Technologies) |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | MOSFET N-CH 500V 400MA SOT223-4 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | BSP299H6327XUSA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jun 02 - Jun 06 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | BSP299H6327XUSA1 |
Brand: | IR (Infineon Technologies) |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | IR (Infineon Technologies) |
Series: | SIPMOS® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 500 V |
Current - Continuous Drain (Id) @ 25°C: | 400mA (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 4Ohm @ 400mA, 10V |
Vgs(th) (Max) @ Id: | 4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | - |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 400 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 1.8W (Ta) |
Operating Temperature: | -55°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | PG-SOT223-4 |
Package / Case: | TO-261-4, TO-261AA |
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In Stock | 10877 - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $0.0000 | $0 |
100 | $0.0000 | $0 |
500 | $0.0000 | $0 |
1000 | $0.0000 | $0 |
2500 | $0.0000 | $0 |
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