For Reference Only
Part Number | IRF6612TR1 |
LIXINC Part # | IRF6612TR1 |
Manufacturer | IR (Infineon Technologies) |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | MOSFET N-CH 30V 24A DIRECTFET |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IRF6612TR1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jun 02 - Jun 06 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | IRF6612TR1 |
Brand: | IR (Infineon Technologies) |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | IR (Infineon Technologies) |
Series: | HEXFET® |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Obsolete |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 30 V |
Current - Continuous Drain (Id) @ 25°C: | 24A (Ta), 136A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 4.5V, 10V |
Rds On (Max) @ Id, Vgs: | 3.3mOhm @ 24A, 10V |
Vgs(th) (Max) @ Id: | 2.25V @ 250µA |
Gate Charge (Qg) (Max) @ Vgs: | 45 nC @ 4.5 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 3970 pF @ 15 V |
FET Feature: | - |
Power Dissipation (Max): | 2.8W (Ta), 89W (Tc) |
Operating Temperature: | -40°C ~ 150°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | DIRECTFET™ MX |
Package / Case: | DirectFET™ Isometric MX |
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In Stock | 10884 - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
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Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $0.0000 | $0 |
100 | $0.0000 | $0 |
500 | $0.0000 | $0 |
1000 | $0.0000 | $0 |
2500 | $0.0000 | $0 |
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