TPC8A02-H(TE12L,Q) | Toshiba Electronic Devices and Storage Corporation TPC8A02-H(TE12L,Q) | TPC8A02-H(TE12L,Q) Inventory, Best Pricing

TPC8A02-H(TE12L,Q)

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Part Number	TPC8A02-H(TE12L,Q)
LIXINC Part #	TPC8A02-H(TE12L,Q)
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 30V 16A 8SOP
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TPC8A02-H(TE12L,Q) PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jun 02 - Jun 06 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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TPC8A02-H(TE12L,Q) Specifications

Part Number:	TPC8A02-H(TE12L,Q)
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	-
Package:	Tape & Reel (TR)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	30 V
Current - Continuous Drain (Id) @ 25°C:	16A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	5.6mOhm @ 8A, 10V
Vgs(th) (Max) @ Id:	2.3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	34 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1970 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	1W (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SOP (5.5x6.0)
Package / Case:	8-SOIC (0.173", 4.40mm Width)