TPH1110ENH,L1Q | Toshiba Electronic Devices and Storage Corporation TPH1110ENH,L1Q

TPH1110ENH,L1Q

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Part Number	TPH1110ENH,L1Q
LIXINC Part #	TPH1110ENH,L1Q
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 200V 7.2A 8SOP
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TPH1110ENH,L1Q PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jun 14 - Jun 18 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

TPH1110ENH,L1Q Specifications

Part Number:	TPH1110ENH,L1Q
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	U-MOSVIII-H
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	200 V
Current - Continuous Drain (Id) @ 25°C:	7.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	114mOhm @ 3.6A, 10V
Vgs(th) (Max) @ Id:	4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:	7 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	600 pF @ 100 V
FET Feature:	-
Power Dissipation (Max):	1.6W (Ta), 42W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	8-SOP Advance (5x5)
Package / Case:	8-PowerVDFN

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