IPS65R1K4C6

IPS65R1K4C6
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Part Number IPS65R1K4C6
LIXINC Part # IPS65R1K4C6
Manufacturer Rochester Electronics
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 3.2A TO251-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPS65R1K4C6 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jun 02 - Jun 06 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPS65R1K4C6 Specifications

Part Number:IPS65R1K4C6
Brand:Rochester Electronics
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Rochester Electronics
Series:CoolMOS™ C6
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:1.4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id:3.5V @ 100µA
Gate Charge (Qg) (Max) @ Vgs:10.5 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:225 pF @ 100 V
FET Feature:-
Power Dissipation (Max):28W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO251-3
Package / Case:TO-251-3 Stub Leads, IPak

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Pricing (USD)

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1$0.35000$0.35

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