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IPB60R180P7ATMA1

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Part Number	IPB60R180P7ATMA1
LIXINC Part #	IPB60R180P7ATMA1
Manufacturer	IR (Infineon Technologies)
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 600V 18A D2PAK
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IPB60R180P7ATMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jun 02 - Jun 06 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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IPB60R180P7ATMA1 Specifications

Part Number:	IPB60R180P7ATMA1
Brand:	IR (Infineon Technologies)
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	IR (Infineon Technologies)
Series:	CoolMOS™ P7
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	18A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	180mOhm @ 5.6A, 10V
Vgs(th) (Max) @ Id:	4V @ 280µA
Gate Charge (Qg) (Max) @ Vgs:	25 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	1081 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	72W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D²PAK (TO-263AB)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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