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FQPF9N25CYDTU

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Part Number	FQPF9N25CYDTU
LIXINC Part #	FQPF9N25CYDTU
Manufacturer	Rochester Electronics
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 250V 8.8A TO220F-3
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	FQPF9N25CYDTU PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jun 02 - Jun 06 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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FQPF9N25CYDTU Specifications

Part Number:	FQPF9N25CYDTU
Brand:	Rochester Electronics
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Rochester Electronics
Series:	QFET®
Package:	Bulk
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	250 V
Current - Continuous Drain (Id) @ 25°C:	8.8A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	430mOhm @ 4.4A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	35 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	710 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	38W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220F-3 (Y-Forming)
Package / Case:	TO-220-3 Full Pack, Formed Leads

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