SIRC16DP-T1-GE3

SIRC16DP-T1-GE3
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Part Number SIRC16DP-T1-GE3
LIXINC Part # SIRC16DP-T1-GE3
Manufacturer Vishay / Siliconix
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 25V 60A PPAK SO-8
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIRC16DP-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Sep 22 - Sep 26 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SIRC16DP-T1-GE3 Specifications

Part Number:SIRC16DP-T1-GE3
Brand:Vishay / Siliconix
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay / Siliconix
Series:TrenchFET® Gen IV
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:0.96mOhm @ 15A, 10V
Vgs(th) (Max) @ Id:2.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:48 nC @ 4.5 V
Vgs (Max):+20V, -16V
Input Capacitance (Ciss) (Max) @ Vds:5150 pF @ 10 V
FET Feature:-
Power Dissipation (Max):54.3W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8

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Quick Inquiry

In Stock 15675 - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$1.32000$1.32
3000$0.61646$1849.38
6000$0.58751$3525.06
15000$0.56685$8502.75

Lixinc will offer the most competitive prices for you, please refer to the quotations.

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