TK200F04N1L,LXGQ | Toshiba Electronic Devices and Storage Corporation TK200F04N1L,LXGQ

TK200F04N1L,LXGQ

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Part Number	TK200F04N1L,LXGQ
LIXINC Part #	TK200F04N1L,LXGQ
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 40V 200A TO220SM
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TK200F04N1L,LXGQ PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jun 02 - Jun 06 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
Shipping

TK200F04N1L,LXGQ Specifications

Part Number:	TK200F04N1L,LXGQ
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	U-MOSVIII-H
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	40 V
Current - Continuous Drain (Id) @ 25°C:	200A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	0.9mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	214 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	14920 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	375W (Tc)
Operating Temperature:	175°C
Mounting Type:	Surface Mount
Supplier Device Package:	TO-220SM(W)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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