For Reference Only
Part Number | TK3A65D(STA4,Q,M) |
LIXINC Part # | TK3A65D(STA4,Q,M) |
Manufacturer | Toshiba Electronic Devices and Storage Corporation |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | MOSFET N-CH 650V 3A TO220SIS |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | TK3A65D(STA4,Q,M) PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jun 02 - Jun 06 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | TK3A65D(STA4,Q,M) |
Brand: | Toshiba Electronic Devices and Storage Corporation |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | Toshiba Electronic Devices and Storage Corporation |
Series: | π-MOSVII |
Package: | Tube |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 650 V |
Current - Continuous Drain (Id) @ 25°C: | 3A (Ta) |
Drive Voltage (Max Rds On, Min Rds On): | 10V |
Rds On (Max) @ Id, Vgs: | 2.25Ohm @ 1.5A, 10V |
Vgs(th) (Max) @ Id: | 4.4V @ 1mA |
Gate Charge (Qg) (Max) @ Vgs: | 11 nC @ 10 V |
Vgs (Max): | ±30V |
Input Capacitance (Ciss) (Max) @ Vds: | 540 pF @ 25 V |
FET Feature: | - |
Power Dissipation (Max): | 35W (Tc) |
Operating Temperature: | 150°C (TJ) |
Mounting Type: | Through Hole |
Supplier Device Package: | TO-220SIS |
Package / Case: | TO-220-3 Full Pack |
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In Stock | 10920 - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $1.43220 | $1.4322 |
50 | $1.43220 | $71.61 |
Lixinc will offer the most competitive prices for you, please refer to the quotations.
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