NVMFS6H800NLWFT1G | Sanyo Semiconductor/ON Semiconductor NVMFS6H800NLWFT1G | NVMFS6H800NLWFT1G Inventory, Best Pricing

NVMFS6H800NLWFT1G

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Part Number	NVMFS6H800NLWFT1G
LIXINC Part #	NVMFS6H800NLWFT1G
Manufacturer	Sanyo Semiconductor/ON Semiconductor
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 80V 30A/224A 5DFN
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	NVMFS6H800NLWFT1G PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jun 02 - Jun 06 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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NVMFS6H800NLWFT1G Specifications

Part Number:	NVMFS6H800NLWFT1G
Brand:	Sanyo Semiconductor/ON Semiconductor
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Sanyo Semiconductor/ON Semiconductor
Series:	Automotive, AEC-Q101
Package:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	80 V
Current - Continuous Drain (Id) @ 25°C:	30A (Ta), 224A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	1.9mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:	2V @ 330µA
Gate Charge (Qg) (Max) @ Vgs:	112 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	6900 pF @ 40 V
FET Feature:	-
Power Dissipation (Max):	3.9W (Ta), 214W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	5-DFN (5x6) (8-SOFL)
Package / Case:	8-PowerTDFN, 5 Leads

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