SQJ415EP-T1_GE3

SQJ415EP-T1_GE3
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Part Number SQJ415EP-T1_GE3
LIXINC Part # SQJ415EP-T1_GE3
Manufacturer Vishay / Siliconix
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET P-CH 40V 30A PPAK SO-8
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SQJ415EP-T1_GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 18 - May 22 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SQJ415EP-T1_GE3 Specifications

Part Number:SQJ415EP-T1_GE3
Brand:Vishay / Siliconix
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay / Siliconix
Series:Automotive, AEC-Q101, TrenchFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:30A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:14mOhm @ 10A, 10V
Vgs(th) (Max) @ Id:2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:95 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:6000 pF @ 25 V
FET Feature:-
Power Dissipation (Max):45W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:8-PowerTDFN

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Quick Inquiry

In Stock 12444 - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.99000$0.99
3000$0.42181$1265.43
6000$0.39444$2366.64
15000$0.38074$5711.1

Lixinc will offer the most competitive prices for you, please refer to the quotations.

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