For Reference Only
Part Number | IPB031N08N5ATMA1 |
LIXINC Part # | IPB031N08N5ATMA1 |
Manufacturer | IR (Infineon Technologies) |
Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Single |
Description | MOSFET N-CH 80V 120A D2PAK |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | IPB031N08N5ATMA1 PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jun 15 - Jun 19 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | ![]() |
Shipping | ![]() |
Part Number: | IPB031N08N5ATMA1 |
Brand: | IR (Infineon Technologies) |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - FETs, MOSFETs - Single |
Manufacturer: | IR (Infineon Technologies) |
Series: | OptiMOS™ |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
FET Type: | N-Channel |
Technology: | MOSFET (Metal Oxide) |
Drain to Source Voltage (Vdss): | 80 V |
Current - Continuous Drain (Id) @ 25°C: | 120A (Tc) |
Drive Voltage (Max Rds On, Min Rds On): | 6V, 10V |
Rds On (Max) @ Id, Vgs: | 3.1mOhm @ 100A, 10V |
Vgs(th) (Max) @ Id: | 3.8V @ 108µA |
Gate Charge (Qg) (Max) @ Vgs: | 87 nC @ 10 V |
Vgs (Max): | ±20V |
Input Capacitance (Ciss) (Max) @ Vds: | 6240 pF @ 40 V |
FET Feature: | - |
Power Dissipation (Max): | 167W (Tc) |
Operating Temperature: | -55°C ~ 175°C (TJ) |
Mounting Type: | Surface Mount |
Supplier Device Package: | D²PAK (TO-263AB) |
Package / Case: | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
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In Stock | 11304 - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $3.20000 | $3.2 |
1000 | $1.69259 | $1692.59 |
2000 | $1.60797 | $3215.94 |
5000 | $1.54751 | $7737.55 |
Lixinc will offer the most competitive prices for you, please refer to the quotations.
Please feel free to contact us for details.