TK8S06K3L(T6L1,NQ) | Toshiba Electronic Devices and Storage Corporation TK8S06K3L(T6L1,NQ) | TK8S06K3L(T6L1,NQ) Inventory, Best Pricing

TK8S06K3L(T6L1,NQ)

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Part Number	TK8S06K3L(T6L1,NQ)
LIXINC Part #	TK8S06K3L(T6L1,NQ)
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 60V 8A DPAK
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TK8S06K3L(T6L1,NQ) PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jun 02 - Jun 06 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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TK8S06K3L(T6L1,NQ) Specifications

Part Number:	TK8S06K3L(T6L1,NQ)
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	U-MOSIV
Package:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	6V, 10V
Rds On (Max) @ Id, Vgs:	54mOhm @ 4A, 10V
Vgs(th) (Max) @ Id:	3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	10 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	400 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	25W (Tc)
Operating Temperature:	175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	DPAK+
Package / Case:	TO-252-3, DPak (2 Leads + Tab), SC-63

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