IAUC24N10S5L300ATMA1 | IR (Infineon Technologies) IAUC24N10S5L300ATMA1 | IAUC24N10S5L300ATMA1 Inventory, Best Pricing

IAUC24N10S5L300ATMA1

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Part Number	IAUC24N10S5L300ATMA1
LIXINC Part #	IAUC24N10S5L300ATMA1
Manufacturer	IR (Infineon Technologies)
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 100V 24A TDSON-8-33
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	IAUC24N10S5L300ATMA1 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 24 - Jan 28 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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IAUC24N10S5L300ATMA1 Specifications

Part Number:	IAUC24N10S5L300ATMA1
Brand:	IR (Infineon Technologies)
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	IR (Infineon Technologies)
Series:	OptiMOS™-5
Package:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	30mOhm @ 12A, 10V
Vgs(th) (Max) @ Id:	2.2V @ 12µA
Gate Charge (Qg) (Max) @ Vgs:	11 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	670 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	38W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TDSON-8-33
Package / Case:	8-PowerTDFN

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