IPAW60R360P7SXKSA1

IPAW60R360P7SXKSA1
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Part Number IPAW60R360P7SXKSA1
LIXINC Part # IPAW60R360P7SXKSA1
Manufacturer IR (Infineon Technologies)
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 9A TO220
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPAW60R360P7SXKSA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jun 16 - Jun 20 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPAW60R360P7SXKSA1 Specifications

Part Number:IPAW60R360P7SXKSA1
Brand:IR (Infineon Technologies)
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:IR (Infineon Technologies)
Series:CoolMOS™ P7
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:9A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:360mOhm @ 2.7A, 10V
Vgs(th) (Max) @ Id:4V @ 140µA
Gate Charge (Qg) (Max) @ Vgs:13 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:555 pF @ 400 V
FET Feature:-
Power Dissipation (Max):22W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO220 Full Pack
Package / Case:TO-220-3 Full Pack

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Quick Inquiry

In Stock 11395 - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$1.21000$1.21
10$1.07399$10.7399
450$0.74493$335.2185
900$0.57515$517.635
1350$0.51971$701.6085

Lixinc will offer the most competitive prices for you, please refer to the quotations.

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