IPD50P03P4L11ATMA2

IPD50P03P4L11ATMA2
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Part Number IPD50P03P4L11ATMA2
LIXINC Part # IPD50P03P4L11ATMA2
Manufacturer IR (Infineon Technologies)
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET P-CH 30V 50A TO252-31
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPD50P03P4L11ATMA2 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jan 24 - Jan 28 2026(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPD50P03P4L11ATMA2 Specifications

Part Number:IPD50P03P4L11ATMA2
Brand:IR (Infineon Technologies)
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:IR (Infineon Technologies)
Series:Automotive, AEC-Q101, OptiMOS®-P2
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:50A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:10.5mOhm @ 50A, 10V
Vgs(th) (Max) @ Id:2V @ 85µA
Gate Charge (Qg) (Max) @ Vgs:55 nC @ 10 V
Vgs (Max):+5V, -16V
Input Capacitance (Ciss) (Max) @ Vds:3770 pF @ 25 V
FET Feature:-
Power Dissipation (Max):58W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO252-3-11
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

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In Stock 10929 - More on Order
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Lead-Time To be Confirmed
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