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FDB0260N1007L

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Part Number	FDB0260N1007L
LIXINC Part #	FDB0260N1007L
Manufacturer	Rochester Electronics
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 100V 200A TO263-7
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	FDB0260N1007L PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 24 - Jan 28 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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FDB0260N1007L Specifications

Part Number:	FDB0260N1007L
Brand:	Rochester Electronics
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Rochester Electronics
Series:	PowerTrench®
Package:	Bulk
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	100 V
Current - Continuous Drain (Id) @ 25°C:	200A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	2.6mOhm @ 27A, 10V
Vgs(th) (Max) @ Id:	4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	118 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	8.545 pF @ 50 V
FET Feature:	-
Power Dissipation (Max):	3.8W (Ta), 250W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	TO-263-7
Package / Case:	TO-263-7, D²Pak (6 Leads + Tab)

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