IPW65R099CFD7AXKSA1

IPW65R099CFD7AXKSA1
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Part Number IPW65R099CFD7AXKSA1
LIXINC Part # IPW65R099CFD7AXKSA1
Manufacturer IR (Infineon Technologies)
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 650V 24A TO247-3-41
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPW65R099CFD7AXKSA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jan 25 - Jan 29 2026(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPW65R099CFD7AXKSA1 Specifications

Part Number:IPW65R099CFD7AXKSA1
Brand:IR (Infineon Technologies)
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:IR (Infineon Technologies)
Series:Automotive, AEC-Q101, CoolMOS™ CFD7A
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):650 V
Current - Continuous Drain (Id) @ 25°C:24A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:99mOhm @ 12.5A, 10V
Vgs(th) (Max) @ Id:4.5V @ 630µA
Gate Charge (Qg) (Max) @ Vgs:53 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:2513 pF @ 400 V
FET Feature:-
Power Dissipation (Max):127W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:PG-TO247-3-41
Package / Case:TO-247-3

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In Stock 11089 - More on Order
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Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

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1$7.04000$7.04

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