TK31V60W,LVQ | Toshiba Electronic Devices and Storage Corporation TK31V60W,LVQ

TK31V60W,LVQ

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Part Number	TK31V60W,LVQ
LIXINC Part #	TK31V60W,LVQ
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 600V 30.8A 4DFN
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TK31V60W,LVQ PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jun 14 - Jun 18 2024(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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TK31V60W,LVQ Specifications

Part Number:	TK31V60W,LVQ
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	DTMOSIV
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	30.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	98mOhm @ 15.4A, 10V
Vgs(th) (Max) @ Id:	3.7V @ 1.5mA
Gate Charge (Qg) (Max) @ Vgs:	86 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	3000 pF @ 300 V
FET Feature:	Super Junction
Power Dissipation (Max):	240W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	4-DFN-EP (8x8)
Package / Case:	4-VSFN Exposed Pad

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