SIR622DP-T1-GE3

SIR622DP-T1-GE3
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Part Number SIR622DP-T1-GE3
LIXINC Part # SIR622DP-T1-GE3
Manufacturer Vishay / Siliconix
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Single
Description MOSFET N-CH 150V 51.6A PPAK SO-8
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models SIR622DP-T1-GE3 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 17 - May 21 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

SIR622DP-T1-GE3 Specifications

Part Number:SIR622DP-T1-GE3
Brand:Vishay / Siliconix
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Single
Manufacturer:Vishay / Siliconix
Series:ThunderFET®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):150 V
Current - Continuous Drain (Id) @ 25°C:51.6A (Tc)
Drive Voltage (Max Rds On, Min Rds On):7.5V, 10V
Rds On (Max) @ Id, Vgs:17.7mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:4.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:31 nC @ 7.5 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:1516 pF @ 75 V
FET Feature:-
Power Dissipation (Max):104W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® SO-8
Package / Case:PowerPAK® SO-8

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Quick Inquiry

In Stock 10851 - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$1.78000$1.78
3000$1.78000$5340
6000$1.69643$10178.58

Lixinc will offer the most competitive prices for you, please refer to the quotations.

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