BSG0811NDATMA1

BSG0811NDATMA1
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Part Number BSG0811NDATMA1
LIXINC Part # BSG0811NDATMA1
Manufacturer IR (Infineon Technologies)
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 25V 19A/41A 8TISON
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models BSG0811NDATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 18 - May 22 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

BSG0811NDATMA1 Specifications

Part Number:BSG0811NDATMA1
Brand:IR (Infineon Technologies)
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:IR (Infineon Technologies)
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual) Asymmetrical
FET Feature:Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss):25V
Current - Continuous Drain (Id) @ 25°C:19A, 41A
Rds On (Max) @ Id, Vgs:3mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:8.4nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds:1100pF @ 12V
Power - Max:2.5W
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerTDFN
Supplier Device Package:PG-TISON-8

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Quick Inquiry

In Stock 18566 - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$2.47000$2.47
5000$1.08807$5440.35

Lixinc will offer the most competitive prices for you, please refer to the quotations.

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