2SB1457(T6DW,F,M)

2SB1457(T6DW,F,M)
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Part Number 2SB1457(T6DW,F,M)
LIXINC Part # 2SB1457(T6DW,F,M)
Manufacturer Toshiba Electronic Devices and Storage Corporation
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Single
Description TRANS PNP 2A 100V TO226-3
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models 2SB1457(T6DW,F,M) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery May 30 - Jun 03 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

2SB1457(T6DW,F,M) Specifications

Part Number:2SB1457(T6DW,F,M)
Brand:Toshiba Electronic Devices and Storage Corporation
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Single
Manufacturer:Toshiba Electronic Devices and Storage Corporation
Series:-
Package:Bulk
Part Status:Obsolete
Transistor Type:PNP
Current - Collector (Ic) (Max):2 A
Voltage - Collector Emitter Breakdown (Max):100 V
Vce Saturation (Max) @ Ib, Ic:1.5V @ 1mA, 1A
Current - Collector Cutoff (Max):10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:2000 @ 1A, 2V
Power - Max:900 mW
Frequency - Transition:50MHz
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Package / Case:TO-226-3, TO-92-3 Long Body
Supplier Device Package:TO-92MOD

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