For Reference Only
Part Number | RN1106MFV,L3F |
LIXINC Part # | RN1106MFV,L3F |
Manufacturer | Toshiba Electronic Devices and Storage Corporation |
Category | Discrete Semiconductor › Transistors - Bipolar (BJT) - Single, Pre-Biased |
Description | TRANS PREBIAS NPN 50V 0.1A VESM |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | RN1106MFV,L3F PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jun 16 - Jun 20 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | RN1106MFV,L3F |
Brand: | Toshiba Electronic Devices and Storage Corporation |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - Bipolar (BJT) - Single, Pre-Biased |
Manufacturer: | Toshiba Electronic Devices and Storage Corporation |
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Transistor Type: | NPN - Pre-Biased |
Current - Collector (Ic) (Max): | 100 mA |
Voltage - Collector Emitter Breakdown (Max): | 50 V |
Resistor - Base (R1): | 4.7 kOhms |
Resistor - Emitter Base (R2): | 47 kOhms |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 10mA, 5V |
Vce Saturation (Max) @ Ib, Ic: | 300mV @ 500µA, 5mA |
Current - Collector Cutoff (Max): | 500nA |
Frequency - Transition: | - |
Power - Max: | 150 mW |
Mounting Type: | Surface Mount |
Package / Case: | SOT-723 |
Supplier Device Package: | VESM |
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In Stock | 16153 - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $0.17000 | $0.17 |
8000 | $0.02657 | $212.56 |
16000 | $0.02310 | $369.6 |
24000 | $0.02079 | $498.96 |
56000 | $0.01848 | $1034.88 |
200000 | $0.01540 | $3080 |
Lixinc will offer the most competitive prices for you, please refer to the quotations.
Please feel free to contact us for details.