For Reference Only
Part Number | HN3C10FUTE85LF |
LIXINC Part # | HN3C10FUTE85LF |
Manufacturer | Toshiba Electronic Devices and Storage Corporation |
Category | Discrete Semiconductor › Transistors - Bipolar (BJT) - RF |
Description | RF TRANS 2 NPN 12V 7GHZ US6 |
Lifecycle | Active |
RoHS | No RoHS Information |
EDA/CAD Models | HN3C10FUTE85LF PCB Footprint and Symbol |
Warehouses | USA, Europe, China, Hong Kong SAR |
Estimated Delivery | Jun 07 - Jun 11 2024(Choose Expedited Shipping) |
Warranty | Up to 1 year [Limited-Warranty]* |
Payment | |
Shipping |
Part Number: | HN3C10FUTE85LF |
Brand: | Toshiba Electronic Devices and Storage Corporation |
Lifecycle: | Active |
RoHS: | Lead free / RoHS Compliant |
Category: | Discrete Semiconductor |
Subcategory: | Transistors - Bipolar (BJT) - RF |
Manufacturer: | Toshiba Electronic Devices and Storage Corporation |
Series: | - |
Package: | Tape & Reel (TR)Cut Tape (CT) |
Part Status: | Active |
Transistor Type: | 2 NPN (Dual) |
Voltage - Collector Emitter Breakdown (Max): | 12V |
Frequency - Transition: | 7GHz |
Noise Figure (dB Typ @ f): | 1.1dB @ 1GHz |
Gain: | 11.5dB |
Power - Max: | 200mW |
DC Current Gain (hFE) (Min) @ Ic, Vce: | 80 @ 20mA, 10V |
Current - Collector (Ic) (Max): | 80mA |
Operating Temperature: | - |
Mounting Type: | Surface Mount |
Package / Case: | 6-TSSOP, SC-88, SOT-363 |
Supplier Device Package: | US6 |
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In Stock | 11097 - More on Order |
---|---|
Quote Limit | No Limit |
Lead-Time | To be Confirmed |
Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
Qty. | Unit Price | Ext. Price |
---|---|---|
1 | $0.54000 | $0.54 |
Lixinc will offer the most competitive prices for you, please refer to the quotations.
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