HN1B01FU-Y(L,F,T)

HN1B01FU-Y(L,F,T)
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Part Number HN1B01FU-Y(L,F,T)
LIXINC Part # HN1B01FU-Y(L,F,T)
Manufacturer Toshiba Electronic Devices and Storage Corporation
Category Discrete SemiconductorTransistors - Bipolar (BJT) - Arrays
Description TRANS NPN/PNP 50V 0.15A US6
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models HN1B01FU-Y(L,F,T) PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jun 02 - Jun 06 2024(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

HN1B01FU-Y(L,F,T) Specifications

Part Number:HN1B01FU-Y(L,F,T)
Brand:Toshiba Electronic Devices and Storage Corporation
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - Bipolar (BJT) - Arrays
Manufacturer:Toshiba Electronic Devices and Storage Corporation
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN, PNP
Current - Collector (Ic) (Max):150mA
Voltage - Collector Emitter Breakdown (Max):50V
Vce Saturation (Max) @ Ib, Ic:300mV @ 10mA, 100mA
Current - Collector Cutoff (Max):100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 2mA, 6V
Power - Max:200mW
Frequency - Transition:120MHz
Operating Temperature:125°C (TJ)
Mounting Type:Surface Mount
Package / Case:6-TSSOP, SC-88, SOT-363
Supplier Device Package:US6

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In Stock 10862 - More on Order
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Lead-Time To be Confirmed
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Pricing (USD)

Qty. Unit Price Ext. Price
1$0.33000$0.33

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