JAN1N5809US

JAN1N5809US
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Part Number JAN1N5809US
LIXINC Part # JAN1N5809US
Manufacturer Roving Networks / Microchip Technology
Category Discrete SemiconductorDiodes - Rectifiers - Single
Description DIODE GEN PURP 100V 6A B-MELF
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models JAN1N5809US PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jan 25 - Jan 29 2026(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

JAN1N5809US Specifications

Part Number:JAN1N5809US
Brand:Roving Networks / Microchip Technology
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Diodes - Rectifiers - Single
Manufacturer:Roving Networks / Microchip Technology
Series:Military, MIL-PRF-19500/477
Package:Bulk
Part Status:Active
Diode Type:Standard
Voltage - DC Reverse (Vr) (Max):100 V
Current - Average Rectified (Io):6A
Voltage - Forward (Vf) (Max) @ If:875 mV @ 4 A
Speed:Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr):30 ns
Current - Reverse Leakage @ Vr:5 µA @ 100 V
Capacitance @ Vr, F:60pF @ 10V, 1MHz
Mounting Type:Surface Mount
Package / Case:SQ-MELF, B
Supplier Device Package:B, SQ-MELF
Operating Temperature - Junction:-65°C ~ 175°C

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Quick Inquiry

In Stock 10880 - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$6.92000$6.92
100$6.92000$692

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