For Reference Only
| Part Number | WNSC08650T6J |
| LIXINC Part # | WNSC08650T6J |
| Manufacturer | WeEn Semiconductors Co., Ltd |
| Category | Discrete Semiconductor › Diodes - Rectifiers - Single |
| Description | SILICON CARBIDE POWER DIODE |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | WNSC08650T6J PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jan 23 - Jan 27 2026(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |
|
| Shipping | ![]() |
| Part Number: | WNSC08650T6J |
| Brand: | WeEn Semiconductors Co., Ltd |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Diodes - Rectifiers - Single |
| Manufacturer: | WeEn Semiconductors Co., Ltd |
| Series: | - |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| Diode Type: | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max): | 650 V |
| Current - Average Rectified (Io): | 8A |
| Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 8 A |
| Speed: | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr): | 0 ns |
| Current - Reverse Leakage @ Vr: | 50 µA @ 650 V |
| Capacitance @ Vr, F: | 267pF @ 1V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | 4-VDFN Exposed Pad |
| Supplier Device Package: | 5-DFN (8x8) |
| Operating Temperature - Junction: | 175°C (Max) |
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| In Stock | 13807 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $3.03000 | $3.03 |
Lixinc will offer the most competitive prices for you, please refer to the quotations.
Please feel free to contact us for details.