For Reference Only
| Part Number | TRS16N65FB,S1F(S |
| LIXINC Part # | TRS16N65FB,S1F(S |
| Manufacturer | Toshiba Electronic Devices and Storage Corporation |
| Category | Discrete Semiconductor › Diodes - Rectifiers - Arrays |
| Description | DODE SCHOTTKY 650V TO247 |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | TRS16N65FB,S1F(S PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jan 24 - Jan 28 2026(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |
|
| Shipping | ![]() |
| Part Number: | TRS16N65FB,S1F(S |
| Brand: | Toshiba Electronic Devices and Storage Corporation |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Diodes - Rectifiers - Arrays |
| Manufacturer: | Toshiba Electronic Devices and Storage Corporation |
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| Diode Configuration: | 1 Pair Common Cathode |
| Diode Type: | Silicon Carbide Schottky |
| Voltage - DC Reverse (Vr) (Max): | 650 V |
| Current - Average Rectified (Io) (per Diode): | 8A (DC) |
| Voltage - Forward (Vf) (Max) @ If: | 1.7 V @ 8 A |
| Speed: | No Recovery Time > 500mA (Io) |
| Reverse Recovery Time (trr): | 0 ns |
| Current - Reverse Leakage @ Vr: | 90 µA @ 650 V |
| Operating Temperature - Junction: | 175°C (Max) |
| Mounting Type: | Through Hole |
| Package / Case: | TO-247-3 |
| Supplier Device Package: | TO-247 |
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| In Stock | 10982 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
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| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $0.0000 | $0 |
| 100 | $0.0000 | $0 |
| 500 | $0.0000 | $0 |
| 1000 | $0.0000 | $0 |
| 2500 | $0.0000 | $0 |
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