2SK3132(Q) | Toshiba Electronic Devices and Storage Corporation 2SK3132(Q)

2SK3132(Q)

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Part Number	2SK3132(Q)
LIXINC Part #	2SK3132(Q)
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 500V 50A TO3P
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	2SK3132(Q) PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 27 - Jan 31 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
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2SK3132(Q) Specifications

Part Number:	2SK3132(Q)
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	-
Package:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	500 V
Current - Continuous Drain (Id) @ 25°C:	50A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	95mOhm @ 25A, 10V
Vgs(th) (Max) @ Id:	3.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	280 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	11000 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	250W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-3P(L)
Package / Case:	TO-3PL

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