2SJ438(AISIN,Q,M) | Toshiba Electronic Devices and Storage Corporation 2SJ438(AISIN,Q,M) | 2SJ438(AISIN,Q,M) Inventory, Best Pricing

2SJ438(AISIN,Q,M)

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Part Number	2SJ438(AISIN,Q,M)
LIXINC Part #	2SJ438(AISIN,Q,M)
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET P-CH TO220NIS
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	2SJ438(AISIN,Q,M) PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 27 - Jan 31 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
Payment
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2SJ438(AISIN,Q,M) Specifications

Part Number:	2SJ438(AISIN,Q,M)
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	*
Package:	Bulk
Part Status:	Obsolete
FET Type:	-
Technology:	-
Drain to Source Voltage (Vdss):	-
Current - Continuous Drain (Id) @ 25°C:	5A (Tj)
Drive Voltage (Max Rds On, Min Rds On):	-
Rds On (Max) @ Id, Vgs:	-
Vgs(th) (Max) @ Id:	-
Gate Charge (Qg) (Max) @ Vgs:	-
Vgs (Max):	-
Input Capacitance (Ciss) (Max) @ Vds:	-
FET Feature:	-
Power Dissipation (Max):	-
Operating Temperature:	-
Mounting Type:	Through Hole
Supplier Device Package:	TO-220NIS
Package / Case:	TO-220-3 Full Pack