TK4A60DB(STA4,Q,M) | Toshiba Electronic Devices and Storage Corporation TK4A60DB(STA4,Q,M) | TK4A60DB(STA4,Q,M) Inventory, Best Pricing

TK4A60DB(STA4,Q,M)

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Part Number	TK4A60DB(STA4,Q,M)
LIXINC Part #	TK4A60DB(STA4,Q,M)
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 600V 3.7A TO220SIS
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TK4A60DB(STA4,Q,M) PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 27 - Jan 31 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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TK4A60DB(STA4,Q,M) Specifications

Part Number:	TK4A60DB(STA4,Q,M)
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	π-MOSVII
Package:	Tube
Part Status:	Last Time Buy
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	600 V
Current - Continuous Drain (Id) @ 25°C:	3.7A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	2Ohm @ 1.9A, 10V
Vgs(th) (Max) @ Id:	4.4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:	11 nC @ 10 V
Vgs (Max):	±30V
Input Capacitance (Ciss) (Max) @ Vds:	540 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	35W (Tc)
Operating Temperature:	150°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-220SIS
Package / Case:	TO-220-3 Full Pack