TPC6012(TE85L,F,M) | Toshiba Electronic Devices and Storage Corporation TPC6012(TE85L,F,M) | TPC6012(TE85L,F,M) Inventory, Best Pricing

TPC6012(TE85L,F,M)

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Part Number	TPC6012(TE85L,F,M)
LIXINC Part #	TPC6012(TE85L,F,M)
Manufacturer	Toshiba Electronic Devices and Storage Corporation
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	MOSFET N-CH 20V 6A VS-6
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	TPC6012(TE85L,F,M) PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 25 - Jan 29 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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TPC6012(TE85L,F,M) Specifications

Part Number:	TPC6012(TE85L,F,M)
Brand:	Toshiba Electronic Devices and Storage Corporation
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	Toshiba Electronic Devices and Storage Corporation
Series:	U-MOSIV
Package:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	20 V
Current - Continuous Drain (Id) @ 25°C:	6A (Ta)
Drive Voltage (Max Rds On, Min Rds On):	2.5V, 4.5V
Rds On (Max) @ Id, Vgs:	20mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:	1.2V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:	9 nC @ 5 V
Vgs (Max):	±12V
Input Capacitance (Ciss) (Max) @ Vds:	630 pF @ 10 V
FET Feature:	-
Power Dissipation (Max):	700mW (Ta)
Operating Temperature:	150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	VS-6 (2.9x2.8)
Package / Case:	SOT-23-6 Thin, TSOT-23-6