IPG20N10S4L22ATMA1

IPG20N10S4L22ATMA1
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Part Number IPG20N10S4L22ATMA1
LIXINC Part # IPG20N10S4L22ATMA1
Manufacturer IR (Infineon Technologies)
Category Discrete SemiconductorTransistors - FETs, MOSFETs - Arrays
Description MOSFET 2N-CH 8TDSON
Lifecycle Active
RoHS No RoHS Information
EDA/CAD Models IPG20N10S4L22ATMA1 PCB Footprint and Symbol
Warehouses USA, Europe, China, Hong Kong SAR
Estimated Delivery Jan 26 - Jan 30 2026(Choose Expedited Shipping)
Warranty Up to 1 year [Limited-Warranty]*
Payment Wire Transfer, UnionPay, PayPal, Credit Card, Visa, MasterCard, AmericanExpress, Discover, WesternUnion, MoneyGram
Shipping DHL, UPS, FedEx, TNT, EMS, & More Express Delivery

IPG20N10S4L22ATMA1 Specifications

Part Number:IPG20N10S4L22ATMA1
Brand:IR (Infineon Technologies)
Lifecycle:Active
RoHS:Lead free / RoHS Compliant
Category:Discrete Semiconductor
Subcategory:Transistors - FETs, MOSFETs - Arrays
Manufacturer:IR (Infineon Technologies)
Series:Automotive, AEC-Q101, OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:2 N-Channel (Dual)
FET Feature:Logic Level Gate
Drain to Source Voltage (Vdss):100V
Current - Continuous Drain (Id) @ 25°C:20A
Rds On (Max) @ Id, Vgs:22mOhm @ 17A, 10V
Vgs(th) (Max) @ Id:2.1V @ 25µA
Gate Charge (Qg) (Max) @ Vgs:27nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds:1755pF @ 25V
Power - Max:60W
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Package / Case:8-PowerVDFN
Supplier Device Package:PG-TDSON-8-4

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Quick Inquiry

In Stock 10962 - More on Order
Quote Limit No Limit
Lead-Time To be Confirmed
Minimum 1

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Pricing (USD)

Qty. Unit Price Ext. Price
1$1.84000$1.84
5000$0.80580$4029
10000$0.78890$7889

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