For Reference Only
| Part Number | FDMA1027P |
| LIXINC Part # | FDMA1027P |
| Manufacturer | Sanyo Semiconductor/ON Semiconductor |
| Category | Discrete Semiconductor › Transistors - FETs, MOSFETs - Arrays |
| Description | MOSFET 2P-CH 20V 3A MICROFET |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | FDMA1027P PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jan 25 - Jan 29 2026(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |
|
| Shipping | ![]() |
| Part Number: | FDMA1027P |
| Brand: | Sanyo Semiconductor/ON Semiconductor |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Transistors - FETs, MOSFETs - Arrays |
| Manufacturer: | Sanyo Semiconductor/ON Semiconductor |
| Series: | PowerTrench® |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | 2 P-Channel (Dual) |
| FET Feature: | Logic Level Gate |
| Drain to Source Voltage (Vdss): | 20V |
| Current - Continuous Drain (Id) @ 25°C: | 3A |
| Rds On (Max) @ Id, Vgs: | 120mOhm @ 3A, 4.5V |
| Vgs(th) (Max) @ Id: | 1.3V @ 250µA |
| Gate Charge (Qg) (Max) @ Vgs: | 6nC @ 4.5V |
| Input Capacitance (Ciss) (Max) @ Vds: | 435pF @ 10V |
| Power - Max: | 800mW |
| Operating Temperature: | -55°C ~ 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Package / Case: | 6-VDFN Exposed Pad |
| Supplier Device Package: | 6-MicroFET (2x2) |
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| In Stock | 10985 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $0.76000 | $0.76 |
| 3000 | $0.30554 | $916.62 |
| 6000 | $0.28447 | $1706.82 |
| 15000 | $0.27393 | $4108.95 |
| 30000 | $0.26819 | $8045.7 |
Lixinc will offer the most competitive prices for you, please refer to the quotations.
Please feel free to contact us for details.