For Reference Only
| Part Number | BYV32-200-E3/45 |
| LIXINC Part # | BYV32-200-E3/45 |
| Manufacturer | Vishay General Semiconductor – Diodes Division |
| Category | Discrete Semiconductor › Diodes - Rectifiers - Arrays |
| Description | DIODE ARRAY GP 200V 18A TO220AB |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | BYV32-200-E3/45 PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jan 25 - Jan 29 2026(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |
|
| Shipping | ![]() |
| Part Number: | BYV32-200-E3/45 |
| Brand: | Vishay General Semiconductor – Diodes Division |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Diodes - Rectifiers - Arrays |
| Manufacturer: | Vishay General Semiconductor – Diodes Division |
| Series: | - |
| Package: | Tube |
| Part Status: | Active |
| Diode Configuration: | 1 Pair Common Cathode |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 200 V |
| Current - Average Rectified (Io) (per Diode): | 18A |
| Voltage - Forward (Vf) (Max) @ If: | 1.15 V @ 20 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 25 ns |
| Current - Reverse Leakage @ Vr: | 10 µA @ 200 V |
| Operating Temperature - Junction: | -65°C ~ 150°C |
| Mounting Type: | Through Hole |
| Package / Case: | TO-220-3 |
| Supplier Device Package: | TO-220AB |
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| In Stock | 11000 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $1.74000 | $1.74 |
| 50 | $1.49660 | $74.83 |
| 100 | $1.24972 | $124.972 |
| 500 | $1.05213 | $526.065 |
| 1000 | $0.85455 | $854.55 |
| 2500 | $0.80516 | $2012.9 |
Lixinc will offer the most competitive prices for you, please refer to the quotations.
Please feel free to contact us for details.