For Reference Only
| Part Number | BYG21M-E3/TR |
| LIXINC Part # | BYG21M-E3/TR |
| Manufacturer | Vishay General Semiconductor – Diodes Division |
| Category | Discrete Semiconductor › Diodes - Rectifiers - Single |
| Description | DIODE AVALANCHE 1KV 1.5A |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | BYG21M-E3/TR PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jan 24 - Jan 28 2026(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |
|
| Shipping | ![]() |
| Part Number: | BYG21M-E3/TR |
| Brand: | Vishay General Semiconductor – Diodes Division |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Diodes - Rectifiers - Single |
| Manufacturer: | Vishay General Semiconductor – Diodes Division |
| Series: | - |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| Diode Type: | Avalanche |
| Voltage - DC Reverse (Vr) (Max): | 1000 V |
| Current - Average Rectified (Io): | 1.5A |
| Voltage - Forward (Vf) (Max) @ If: | 1.6 V @ 1.5 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 120 ns |
| Current - Reverse Leakage @ Vr: | 1 µA @ 1000 V |
| Capacitance @ Vr, F: | - |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AC, SMA |
| Supplier Device Package: | DO-214AC (SMA) |
| Operating Temperature - Junction: | -55°C ~ 150°C |
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| In Stock | 12938 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $0.51000 | $0.51 |
| 1800 | $0.14409 | $259.362 |
| 3600 | $0.13345 | $480.42 |
| 5400 | $0.12634 | $682.236 |
| 12600 | $0.11926 | $1502.676 |
| 45000 | $0.11571 | $5206.95 |
Lixinc will offer the most competitive prices for you, please refer to the quotations.
Please feel free to contact us for details.