For Reference Only
| Part Number | ESH3DHE3_A/H |
| LIXINC Part # | ESH3DHE3_A/H |
| Manufacturer | Vishay General Semiconductor – Diodes Division |
| Category | Discrete Semiconductor › Diodes - Rectifiers - Single |
| Description | DIODE GEN PURP 200V 3A DO214AB |
| Lifecycle | Active |
| RoHS | No RoHS Information |
| EDA/CAD Models | ESH3DHE3_A/H PCB Footprint and Symbol |
| Warehouses | USA, Europe, China, Hong Kong SAR |
| Estimated Delivery | Jan 24 - Jan 28 2026(Choose Expedited Shipping) |
| Warranty | Up to 1 year [Limited-Warranty]* |
| Payment |
|
| Shipping | ![]() |
| Part Number: | ESH3DHE3_A/H |
| Brand: | Vishay General Semiconductor – Diodes Division |
| Lifecycle: | Active |
| RoHS: | Lead free / RoHS Compliant |
| Category: | Discrete Semiconductor |
| Subcategory: | Diodes - Rectifiers - Single |
| Manufacturer: | Vishay General Semiconductor – Diodes Division |
| Series: | Automotive, AEC-Q101 |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| Diode Type: | Standard |
| Voltage - DC Reverse (Vr) (Max): | 200 V |
| Current - Average Rectified (Io): | 3A |
| Voltage - Forward (Vf) (Max) @ If: | 900 mV @ 3 A |
| Speed: | Fast Recovery =< 500ns, > 200mA (Io) |
| Reverse Recovery Time (trr): | 40 ns |
| Current - Reverse Leakage @ Vr: | 5 µA @ 200 V |
| Capacitance @ Vr, F: | 70pF @ 4V, 1MHz |
| Mounting Type: | Surface Mount |
| Package / Case: | DO-214AB, SMC |
| Supplier Device Package: | DO-214AB (SMC) |
| Operating Temperature - Junction: | -55°C ~ 175°C |
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| In Stock | 16520 - More on Order |
|---|---|
| Quote Limit | No Limit |
| Lead-Time | To be Confirmed |
| Minimum | 1 |
Warm Tips: Please fill out the form below. We will contact you as soon as possible.
| Qty. | Unit Price | Ext. Price |
|---|---|---|
| 1 | $0.80000 | $0.8 |
| 850 | $0.45041 | $382.8485 |
| 1700 | $0.36961 | $628.337 |
| 2550 | $0.33931 | $865.2405 |
| 5950 | $0.32922 | $1958.859 |
Lixinc will offer the most competitive prices for you, please refer to the quotations.
Please feel free to contact us for details.