SCT3060ALGC11 | ROHM Semiconductor SCT3060ALGC11 | SCT3060ALGC11 Inventory, Best Pricing

SCT3060ALGC11

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Part Number	SCT3060ALGC11
LIXINC Part #	SCT3060ALGC11
Manufacturer	ROHM Semiconductor
Category	Discrete Semiconductor › Transistors - FETs, MOSFETs - Single
Description	SICFET N-CH 650V 39A TO247N
Lifecycle	Active
RoHS	No RoHS Information
EDA/CAD Models	SCT3060ALGC11 PCB Footprint and Symbol
Warehouses	USA, Europe, China, Hong Kong SAR
Estimated Delivery	Jan 23 - Jan 27 2026(Choose Expedited Shipping)
Warranty	Up to 1 year [Limited-Warranty]*
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SCT3060ALGC11 Specifications

Part Number:	SCT3060ALGC11
Brand:	ROHM Semiconductor
Lifecycle:	Active
RoHS:	Lead free / RoHS Compliant
Category:	Discrete Semiconductor
Subcategory:	Transistors - FETs, MOSFETs - Single
Manufacturer:	ROHM Semiconductor
Series:	-
Package:	Tube
Part Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	650 V
Current - Continuous Drain (Id) @ 25°C:	39A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	18V
Rds On (Max) @ Id, Vgs:	78mOhm @ 13A, 18V
Vgs(th) (Max) @ Id:	5.6V @ 6.67mA
Gate Charge (Qg) (Max) @ Vgs:	58 nC @ 18 V
Vgs (Max):	+22V, -4V
Input Capacitance (Ciss) (Max) @ Vds:	852 pF @ 500 V
FET Feature:	-
Power Dissipation (Max):	165W (Tc)
Operating Temperature:	175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-247N
Package / Case:	TO-247-3

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